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Référence fabricant

PSMN069-100YS,115

PSMN069 Series 100 V 202.7 mOhm 14 nC N-Channel Standard Level MOSFET - LFPAK-4

Modèle ECAD:
Nom du fabricant: Nexperia
Emballage standard:
Code de date: 2404
Product Specification Section
Nexperia PSMN069-100YS,115 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 72.4mΩ
Rated Power Dissipation: 56W
Qg Gate Charge: 14nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 17A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 19ns
Rise Time: 7ns
Fall Time: 5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: TrenchMOS
Input Capacitance: 645pF
Style d'emballage :  SOT-669
Méthode de montage : Surface Mount
Fonctionnalités et applications

The PSMN069-100YS,115 is a Standard level N-channel MOSFET with LFPAK package and its Operating range is 175 °C. This product is Designed for Industrial Applications. 

Product Features:

  • Advanced TrenchMOS provides low RDSon and low gate charge
  • High efficiency gains in switching power converters
  • Improved mechanical and thermal characteristics
  • LFPAK provides maximum power density in a Power SO8 package

Applications:

  • DC-to-DC converters
  • Lithium-ion battery protection
  • Load switching
  • Motor control
  • Server power supplies
Pricing Section
Stock global :
10 500
États-Unis:
10 500
Sur commande :Order inventroy details
63 000
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
10 Semaines
Commande minimale :
1500
Multiples de :
1500
Total 
315,00 $
USD
Quantité
Prix unitaire
1 500
$0.21
3 000
$0.205
15 000+
$0.199