onsemi | NDS0610

The NDS0610 is a Part of NDS Series P-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

They can be used, with a minimum of effort, in most applications requiring up to 120 mA DC and can deliver current up to 1 A. This product is particularly suited to low voltage applications requiring a low current high side switch.

Features:

• 0.12A, -60V
• RDS(ON) = 10 W @ VGS = -10 V
• RDS(ON) = 20W @ VGS = -4.5 V
• Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON)
• High saturation current

Applications:

• Automation
• Broadband Access
• Broadband Modem
• Broadcast & Studio
• Building & Home Control
• Camcorder