Référence fabricant
IRFR5305TRPBF
Single P-Channel 55V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA
Infineon IRFR5305TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
Infineon IRFR5305TRPBF - Caractéristiques techniques
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.065Ω |
Rated Power Dissipation: | 110|W |
Qg Gate Charge: | 63nC |
Style d'emballage : | TO-252AA |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The IRFR5305TRPBF is a Fifth Generation HEXFET from International Rectifier that utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. For more information, please see the datasheet above.
The IRFR5305TRPBF comes in a D-Pak package. These come in Tape and Reel as indicated by the TR, and are lead free as indicated by the PBF.Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252AA
Méthode de montage :
Surface Mount