Manufacturer Part #
DMTH6016LPSQ-13
Single N-Channel 60 V 2.6 W 17 nC Silicon Surface Mount Mosfet - POWERDI5060-8
Product Specification Section
Diodes Incorporated DMTH6016LPSQ-13 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Diodes Incorporated DMTH6016LPSQ-13 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 60V |
Drain-Source On Resistance-Max: | 24mΩ |
Rated Power Dissipation: | 2.6W |
Qg Gate Charge: | 17nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 9.8A |
Turn-on Delay Time: | 3.4ns |
Turn-off Delay Time: | 13ns |
Rise Time: | 5.2ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.5V |
Technology: | Si |
Height - Max: | 1.1mm |
Length: | 5.15mm |
Input Capacitance: | 864pF |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
8 Weeks
Quantity
Web Price
2,500
$0.199
5,000
$0.195
7,500
$0.193
10,000
$0.191
12,500+
$0.186
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel