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Nexperia | BSH103,215

Référence fabricant

BSH103,215

BSH103 Series 30 V 850 mA 400 mOhm N-Ch Enhancement Mode MOS Transistor - SOT-23

Modèle ECAD:
Nom du fabricant: Nexperia
Emballage standard:
Product Variant Information section
Code de date: 2417
Product Specification Section
Nexperia BSH103,215 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.4Ω
Rated Power Dissipation: 500|mW
Qg Gate Charge: 2100pC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 0.85A
Turn-on Delay Time: 2.5ns
Turn-off Delay Time: 20ns
Rise Time: 3.5ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Height - Max: 1mm
Length: 3mm
Style d'emballage :  SOT-23 (SC-59,TO-236)
Méthode de montage : Surface Mount
Fonctionnalités et applications
The BSH Series is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
 
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
 
Features:
 
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families
  • Suitable for very low gate drive sources

Applications:

  • "Glue-logic"; interface between logic blocks and/or periphery
  • Battery powered applications
  • DC-to-DC convertors
  • General purpose switching
  • Power management

View the BSH series of  N-Channel MOS Transistor

Pricing Section
Stock global :
972 000
d’Allemagne (En ligne seulement):
972 000
Sur commande :Order inventroy details
1 278 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
8 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
204,00 $
USD
Quantité
Prix unitaire
3 000
$0.068
9 000
$0.0663
12 000
$0.0658
30 000
$0.0644
45 000+
$0.0631
Product Variant Information section