Référence fabricant
BSH103,215
BSH103 Series 30 V 850 mA 400 mOhm N-Ch Enhancement Mode MOS Transistor - SOT-23
Product Specification Section
Nexperia BSH103,215 - Spécifications du produit
Informations de livraison:
L'article ne peut être envoyé à certains pays. Voir la liste
L'article ne peut pas être envoyé aux pays suivants:
ECCN:
EAR99
Informations PCN:
N/A
Fichier
Date
Statut du produit:
Actif
Actif
Nexperia BSH103,215 - Caractéristiques techniques
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.4Ω |
Rated Power Dissipation: | 500|mW |
Qg Gate Charge: | 2100pC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 0.85A |
Turn-on Delay Time: | 2.5ns |
Turn-off Delay Time: | 20ns |
Rise Time: | 3.5ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +150°C |
Height - Max: | 1mm |
Length: | 3mm |
Style d'emballage : | SOT-23 (SC-59,TO-236) |
Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The BSH Series is a Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features:
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use with all 5 V logic families
- Suitable for very low gate drive sources
Applications:
- "Glue-logic"; interface between logic blocks and/or periphery
- Battery powered applications
- DC-to-DC convertors
- General purpose switching
- Power management
View the BSH series of N-Channel MOS Transistor
Pricing Section
Stock global :
3 000
États-Unis:
3 000
Délai d'usine :
8 Semaines
Quantité
Prix unitaire
3 000
$0.067
9 000
$0.0653
12 000
$0.0649
30 000
$0.0635
45 000+
$0.0622
Product Variant Information section
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
SOT-23 (SC-59,TO-236)
Méthode de montage :
Surface Mount