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Manufacturer Part #

NVH4L060N090SC1

N-Channel 900 V 46 A 221 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NVH4L060N090SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain Current: 46A
Input Capacitance: 1770pF
Power Dissipation: 221W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,153.50
USD
Quantity
Web Price
1
$9.69
5
$9.58
25
$9.46
100
$9.37
250+
$9.23
Product Variant Information section