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onsemi | NTH4L028N170M1

Manufacturer Part #

NTH4L028N170M1

N-Channel 1700 V 81 A 535 W Through Hole Silicon Carbide MOSFET - TO-247-4L

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Mfr. Name: onsemi
Standard Pkg:
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Product Specification Section
onsemi NTH4L028N170M1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1700V
Drain Current: 81A
Input Capacitance: 4230pF
Power Dissipation: 535W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
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Total
$32.62
USD
Quantity
Web Price
1
$32.62
4
$32.22
20
$31.76
40
$31.57
125+
$31.06
Product Variant Information section