Manufacturer Part #
N25S830HAS22I
N25S830HA Series 256 Kbyte 3 V Low Power Serial SRAM - SOIC-8
onsemi N25S830HAS22I - Product Specification
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onsemi N25S830HAS22I - Technical Attributes
Memory Density: | 256kb |
Memory Organization: | 32 K x 8 |
Supply Voltage-Nom: | 2.7V to 3.6V |
Access Time-Max: | 10ns |
Temperature Grade: | Industrial |
Speed: | 20MHz |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
Features & Applications
The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 Kb serially accessed Static Random Access Memory, internally organized as 32 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high−speed performance and low power.
The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N25S830HA devices include a HOLD pin that allows communication to the device to be paused. While paused, input transitions will be ignored. The devices can operate over a wide temperature range of −40°C to +85°C and can be available in several standard package offerings.
Key Features:
- Power Supply Range: 2.7 to 3.6 V
- Very Low Standby Current: Typical Isb as low as 1 µA
- Very Low Operating Current: As low as 3 mA
- Simple Memory Control:
- Single chip select (CS(Bar))
- Serial input (SI) and serial output (SO)
- Flexible Operating Modes:
- Word read and write
- Page mode (32 word page)
- Burst mode (full array)
- Organization: 32 K x 8 bit
- Self Timed Write Cycles
- Built−in Write Protection (CS High)
- HOLD Pin for Pausing Communication
- High Reliability: Unlimited write cycles
- Green SOIC and TSSOP
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Available Packaging
Package Qty:
100 per Tube
Package Style:
SOIC-8
Mounting Method:
Surface Mount