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Manufacturer Part #

NTHL040N120M3S

N-Channel 1200 V 54 A 231 W Through Hole Silicon Carbide MOSFET - TO-247-3

Product Specification Section
onsemi NTHL040N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 54A
Input Capacitance: 1700pF
Power Dissipation: 231W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
130
USA:
130
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
130
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$625.30
USD
Quantity
Unit Price
450+
$4.81