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Manufacturer Part #

NTBG040N120M3S

N-Channel 1200 V 54 mOhm 263 W Surface Mount Silicon Carbide MOSFET - D2PAK-7

Product Specification Section
onsemi NTBG040N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 57A
Input Capacitance: 1700pF
Power Dissipation: 263W
Operating Temp Range: -55°C to +175°C
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,600
Germany (Online Only):
1,600
1,600
Factory Stock:Factory Stock:
800
Factory Lead Time:
17 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,944.00
USD
Quantity
Web Price
800+
$4.93