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Manufacturer Part #

NSF040120D7A0J

1200 V 65 A 60 mOhm Single N-Channel Silicon Carbide MOSFET - TO-263-7

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Date Code:
Product Specification Section
Nexperia NSF040120D7A0J - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2kV
Drain Current: 65A
Input Capacitance: 2600pF
Power Dissipation: 306W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$8,120.00
USD
Quantity
Unit Price
800+
$10.15