Manufacturer Part #
IRLR3110ZTRPBF
Single N-Channel 100 V 16 mOhm 48 nC HEXFET® Power Mosfet - TO-252AA
Product Specification Section
Infineon IRLR3110ZTRPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Infineon IRLR3110ZTRPBF - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 16mΩ |
Rated Power Dissipation: | 140W |
Qg Gate Charge: | 48nC |
Gate-Source Voltage-Max [Vgss]: | 16V |
Drain Current: | 63A |
Turn-on Delay Time: | 24ns |
Turn-off Delay Time: | 33ns |
Rise Time: | 110ns |
Fall Time: | 48ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.5V |
Technology: | Advanced Process Technology |
Height - Max: | 2.39mm |
Length: | 6.73mm |
Input Capacitance: | 3980pF |
Package Style: | TO-252AA |
Mounting Method: | Surface Mount |
Features & Applications
The IRLR3110ZTRPBF is a 100 V 63 A Single N-Channel Hexfet Power Mosfets available in DPAK Package. It has an operating temperature ranging between -55 to 175°C.
Features:
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Applications:
- Industrial applications
Pricing Section
Global Stock:
28,000
USA:
28,000
Factory Lead Time:
12 Weeks
Quantity
Unit Price
2,000
$0.505
4,000
$0.50
6,000
$0.495
8,000+
$0.49
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Package Style:
TO-252AA
Mounting Method:
Surface Mount