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Manufacturer Part #

IPD95R750P7ATMA1

N-Channel 950 V 750 mOhm 23 nC SMT CoolMOS™ Power Mosfet - PG-TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD95R750P7ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 950V
Drain-Source On Resistance-Max: 0.75Ω
Rated Power Dissipation: 73W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 46ns
Rise Time: 7ns
Fall Time: 8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 712pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,875.00
USD
Quantity
Web Price
2,500
$0.75
5,000+
$0.72
Product Variant Information section