Renesas — HIP2210/HIP2211 Half-Bridge Drivers

HIP2210/HIP2211 Half-Bridge NMOS FET Drivers

Renesas HIP2210/2211 Half-Bridge Drivers are 100V, 4A sink high-frequency half-bridge NMOS FET drivers. These drivers feature a strong 3A source with very fast 15ns typical propagation delay and 2ns typical delay matching. As a result, the drivers are optimal for high-frequency switching applications. Both half-bridge drivers feature a wide operating supply range of 6V to 18V and an integrated high-side bootstrap diode that supports driving the high-side and low-side NMOS in 100V half-bridge applications. VDD and boot UVLO protects against an undervoltage operation.

HIP2210 Driver

Offered a 10 Ld 4x4mm TDFN package

The Renesas HIP2210 features a tri-level PWM input with programmable dead time. The tri-level input of the HIP2210 PWM pin controls the high-side and low-side drivers with a single pin.

• When the PWM input is at logic high, the high-side bridge FET is turned on and the low-side FET is off.
• When the input is at logic low, the low-side bridge FET is turned on and the high-side FET is turned off.
• When the input voltage is in the mid-level state, both the high-side and low-side bridge FETs are turned off.

The PWM threshold levels are proportional to an external input reference voltage on the VREF pin, allowing PWM operation across a 2.7V to 5.5V logic range.

HIP2211 Driver

Available in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages

The Renesas HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. The PWM threshold levels are proportional to an external input reference voltage on the VREF pin, allowing PWM operation across a 2.7V to 5.5V logic range.