onsemi DC Fast EV Charging Solutions
Did you know:
DC Fast EV Charging systems can add 100km range in less than 5 Min
Expected growth of Fast DC chargers is at a Compound Annual Growth Rate (CAGR) of approximately 30% for the next 5 years
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Our top picks in onsemi's EV Charging portfolio
NTH4L022N120M3S EliteSiC MOSFET, 1200 V
22 mohm M3S Series in TO247-4LD package
The new family of onsemi 1200V M3S planar SiC MOSFETs (NTH4L022N120M3S) is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drives but also works well with 15V gate drives.
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NCP51561 EliteSiC Isolated Dual-Channel Gate Driver
Featuring 4.5-A/9-A source and sink peak current respectively
The onsemi NCP51561 isolated dual-channel gate drivers with 4.5-A/9-A source and sink peak current (respectively) are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches.
The NCP51561 offers short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when is set low.
The NCP51561 offers other important protection functions such as independent under-voltage lockout for both gate drivers and enable function.
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View AND90063/D Application Note
Related: onsemi Isolated Compact IGBT Gate Drivers
Isolated Dual-Channel Gate Driver Evaluation Board
View EVBUM2817/D Evaluation Board Document »
EliteSiC Modules
Featuring a comprehensive selection of 900 V and 1200 V
These Silicon Carbide (SiC) Modules from onsemi have integrated SiC MOSFETs and SiC Diodes that provide lower conduction and switching losses, while enabling designers to achieve high efficiency and superior reliability.
View NXH010P120MNF1PNG Datasheet
View NXH040F120MNF1PTG Datasheet
Learn more: Silicon Carbide (SiC) Solutions
A dedicated Future Technology Magazine feature on Silicon Carbide and Gallium Nitride
Two next-generation materials for high performance power conversion and electric vehicles
These wide bandgap (WBG) materials will power future applications for high performance in Solar Power, Vehicle Electrification, Cloud Computing, EV Charging and other applications.
Explore this special issue of Future Technology Magazine that focuses on the complete onsemi Wide Bandgap Solutions in stock at Future Electronics.