Littelfuse IX4352NE Low-Side Silicon Carbide (SiC) MOSFET and IGBT Gate Driver
Perfect for industrial applications
The Littelfuse IX4352NE features separate 9 A source and sink outputs, which enable tailored turn-on and turn-off timing while minimizing switching losses. With an operating voltage range (VDD − VSS) of up to 35 V, the IX4352NE offers exceptional flexibility and robustness. One of the standout features is an internal charge pump regulator which provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. This charge pump eliminates the need for an external auxiliary power supply or DC/DC converter.
Also, standard low and high input logic signals are translated by the driver to the selected positive and negative gate drive voltages, saving valuable space typically required for external logic level translator circuitry. The logic input's compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities.
Notable improvements over the existing IX4351NE include a safe DESAT-initiated soft turn-off, a thermal shutdown with high threshold accuracy and the charge pump's ability to operate during thermal shutdown.
Key Features
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The IX4352NE simplifies circuit design and offers a higher level of integration. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, Under Voltage Lockout (UVLO), and thermal shutdown (TSD) ensure the protection of the power device and the gate driver. The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability. The IX4352NE saves valuable PCB space and increases circuit density, contributing to overall system efficiency.
