Name: Everspin Technologies MR2A16ACYS35
Brand: Everspin Technologies
SKU: 1732205
Price: 23.35 USD
Availability: InStock

text.skipToContent text.skipToNavigation

- Region & Currency
- Americas
  - Other Currencies
  - CAD ($)
  - USD ($)
- Asia Pacific
  - Other Currencies
  - AUD ($)
  - CNY (¥)
  - HKD ($)
  - NZD ($)
  - SGD ($)
  - USD ($)
- Europe, Middle East, Africa
  - Other Currencies
  - CHF (CHF)
  - CZK (Kč)
  - DKK (kr)
  - USD ($)
You are changing the region you shop from. This may affect price, shipping options and product availability. Items in your current Cart will not be transferred.

You are changing currency. This may affect price, shipping options and product availability. Items in your current Cart will not be transferred.
1 (800) 675-1619

Free shipping within the continental US over $50. Conditions apply

Image for illustration purposes only,
refer to technical specifications

Manufacturer Part #

MR2A16ACYS35

MR2A16 Series 256 K x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

MR2A16ACYS35 Datasheet
ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model.
Mfr. Name:	Everspin Technologies
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 135 per Tray Package Style: TSOP-44 Mounting Method: Surface Mount
Date Code:	2332

Everspin Technologies MR2A16ACYS35 - Technical Attributes

Memory Density:	4Mb
Interface Type:	Parallel
Memory Organization:	256 K x 16
Supply Voltage-Nom:	3V to 3.6V
Access Time-Max:	35ns
Temperature Range:	-40°C to +85°C
Package Style:	TSOP-44
Mounting Method:	Surface Mount

Features & Applications

The MR2A16ACYS35 is a 4 Mb magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. It is available in 44-pin thin small outline package (TSOP Type 2).

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Features:

Fast 35 ns Read/Write Cycle
SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
Unlimited Read & Write Endurance
Data Non-volatile for >20 years at Temperature
One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
Replace battery-backed SRAM solutions with MRAM to improve reliability
3.3 Volt Power Supply
Automatic Data Protection on Power Loss
Commercial, Industrial, Extended Temperatures
RoHS-Compliant SRAM TSOP2 and BGA Packages - MSL Level 3
AEC-Q100 Grade 1 option

View the available MR2A16A series of MRAMs