Manufacturer Part #
IPP129N10NF2SAKMA1
Single N-Channel 100 V 12.9 mOhm 19 nC StrongIRFET™ 2 Power MOSFET - TO-220-3
Infineon IPP129N10NF2SAKMA1 - Product Specification
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Infineon IPP129N10NF2SAKMA1 - Technical Attributes
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 12.9mΩ |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 19nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 52A |
Turn-on Delay Time: | 8.8ns |
Turn-off Delay Time: | 13ns |
Rise Time: | 14.5ns |
Fall Time: | 3.6ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 3V |
Input Capacitance: | 1300pF |
Series: | StrongIRFET™ 2 |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Features & Applications
Infineon's StrongIRFET™ 2 power MOSFET 100V features low RDS(on) of 12.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPP129N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
Summary of Features
•Broad availability from distribution partners
•Excellent price/performance ratio
•Ideal for high- and low-switching frequency
•Industry standard footprint through-hole package
•High current rating
•Capable of wave-soldering
Benefits
•Multi-vendor compatibility
•Right-fit products
•Supports a wide variety of applications
•Standard pinout allows for drop-in replacement
•Increased current carrying capability
•Ease of manufacturing
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole