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Manufacturer Part #

IMT65R072M1HXUMA1

CoolSiC Series 650 V 36 A 94 mOhm Single N-Channel MOSFET - PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2327
Product Specification Section
Infineon IMT65R072M1HXUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 94mΩ
Rated Power Dissipation: 174W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 36A
Turn-on Delay Time: 6.1ns
Turn-off Delay Time: 12.1ns
Rise Time: 7.9ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.7V
Input Capacitance: 744pF
Package Style:  HSOF-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
9
Germany (Online Only):
9
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$3.09
USD
Quantity
Unit Price
1
$3.09
15
$2.99
50
$2.95
250
$2.89
1,000+
$2.81