Manufacturer Part #
CHT-PLA8543E-TO257-T
CHT-NEPTUNE 20 V 10 A High Temperature Silicon Carbide Mosfet - TO-257-3
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| Mfr. Name: | CISSOID | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1 per Bulk Package Style:TO-257 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
CISSOID CHT-PLA8543E-TO257-T - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
3A001.h
This item may be subject to export licensing controls.
PCN Information:
N/A
File
Date
Part Status:
Obsolete
Obsolete
CISSOID CHT-PLA8543E-TO257-T - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 12A |
| Input Capacitance: | 1337pF |
| Power Dissipation: | 30W |
| Operating Temp Range: | -55°C to +225°C |
| Package Style: | TO-257 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
1
$458.83
2
$452.14
3
$448.27
4
$445.54
5+
$436.98
Product Variant Information section
Available Packaging
Package Qty:
1 per Bulk
Package Style:
TO-257
Mounting Method:
Through Hole