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Manufacturer Part #

BSP149H6327XTSA1

Single N-Channel 200 V 3.5 Ohm 11 nC SIPMOS® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2403
Product Specification Section
Infineon BSP149H6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 3.5Ω
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 11nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$340.00
USD
Quantity
Unit Price
1,000
$0.34
2,000
$0.335
3,000
$0.33
10,000+
$0.32
Product Variant Information section