HIP2101IBZT in Reel by Renesas | MOSFET / IGBT Drivers | Future Electronics
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Manufacturer Part #

HIP2101IBZT

HIP2101 Series Low Side/High Side N-Ch 114 V 2 A Half Bridge Driver - SOIC-8

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
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Product Specification Section
Renesas HIP2101IBZT - Technical Attributes
Attributes Table
Configuration: Half Bridge
Supply Voltage-Max: 18V
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The HIP2101IBZT is a high frequency, 100 V half bridge N-channel power MOSFET driver IC, available in 8 pin SOIC package.

Features:

  • Drives N-Channel MOSFET Half Bridge
  • SOIC, EPSOIC, QFN and DFN Package Options
  • SOIC, EPSOIC and DFN Packages Compliant with 100 V Conductor Spacing Guidelines of IPC-2221
  • Pb-Free Product Available (RoHS Compliant)
  • Bootstrap Supply Max Voltage to 114VDC
  • On-Chip 1 Ω Bootstrap Diode
  • Fast Propagation Times for Multi-MHz Circuits
  • Drives 1000pF Load with Rise and Fall Times Typ. 10ns
  • CMOS Input Thresholds for Improved Noise Immunity
  • Independent Inputs for Non-Half Bridge Topologies
  • No Start-Up Problems
  • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
  • Low Power Consumption
  • Wide Supply Range
  • Supply Undervoltage Protection
  • 3 Ω Driver Output Resistance

Applications:

  • Telecom Half Bridge Power Supplies
  • Avionics DC/DC Converters
  • Two-Switch Forward Converters
  • Active Clamp Forward Converters
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Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,975.00
USD
Quantity
Unit Price
2,500+
$1.99
Product Variant Information section