FDD6685 in Reel by onsemi | Mosfet | Future Electronics
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Référence fabricant

FDD6685

P-Channel 30 V 20 mOhm Surface Mount PowerTrench Mosfet TO-252-3

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
onsemi FDD6685 - Caractéristiques techniques
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 1.6W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 11A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 43ns
Rise Time: 11ns
Fall Time: 21ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.8V
Technology: PowerTrench
Input Capacitance: 1715pF
Style d'emballage :  TO-252-3 (DPAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDD6685 is a 30 V 20 mΩ P-Channel MOSFET is a rugged gate version of advanced PowerTrench process It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V – 25 V)

Features:

  • -40 A, -30 V
  • RDS(ON) = 20 mΩ @ VGS = -10 V
  • RDS(ON) = 30 mΩ @ VGS = -4.5 V
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101

Applications:

  • External AC-DC Merchant Power Supply -
  • Wireless Communications
  • Wireless LAN Access Point/Router
  • E-book Reader
Voir plus...
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
16 Semaines
Commande minimale :
2500
Multiples de :
2500
Total 
1 287,50 $
USD
Quantité
Prix unitaire
2 500
$0.515
5 000+
$0.505
Product Variant Information section