DMN6069SE-13 in Reel by Diodes Incorporated | Mosfets | Future Electronics
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Manufacturer Part #

DMN6069SE-13

N-Channel 60 V 4.3 A 2.2 W Enhancement Mode Surface Mount Mosfet - SOT-223

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2450
Product Specification Section
Diodes Incorporated DMN6069SE-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 69mΩ
Rated Power Dissipation: 2.2W
Qg Gate Charge: 16nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 4.3A
Turn-on Delay Time: 3.8ns
Turn-off Delay Time: 16ns
Rise Time: 6.7ns
Fall Time: 5.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 825pF
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
65,000
USA:
65,000
167,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$367.50
USD
Quantity
Unit Price
2,500
$0.147
5,000
$0.145
7,500
$0.144
12,500
$0.143
25,000+
$0.14
Product Variant Information section