SIS468DN-T1-GE3 in Reel by Vishay | Mosfets | Future Electronics
text.skipToContent text.skipToNavigation

Manufacturer Part #

SIS468DN-T1-GE3

N-Channel 80 V 19.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK-1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIS468DN-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 19.5mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 18.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9.8A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 15ns
Rise Time: 10ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Input Capacitance: 780pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
117,000
Factory Lead Time:
28 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,590.00
USD
Quantity
Unit Price
3,000
$0.53
6,000+
$0.52
Product Variant Information section