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Manufacturer Part #
IRF1010NPBF
Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon IRF1010NPBF - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Discontinuation
04/04/2024 Details and Download
Multiple Material Change
12/18/2023 Details and Download
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Obsolete
Obsolete
Infineon IRF1010NPBF - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 11mΩ |
| Rated Power Dissipation: | 180|W |
| Qg Gate Charge: | 120nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Flange Mount |
Features & Applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1
$0.55
75
$0.54
250
$0.525
750
$0.515
2,500+
$0.49
Product Variant Information section
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount