Name: Infineon IRFI540NPBF
Brand: Infineon
SKU: 8744484
Price: 0.615 USD
Availability: InStock

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refer to technical specifications

Manufacturer Part #

IRFI540NPBF

Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-220-3FP

IRFI540NPBF Datasheet
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Mfr. Name:	Infineon
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 50 per Tube Package Style: TO-220-3 (TO-220AB)
Date Code:	2420

Infineon IRFI540NPBF - Technical Attributes

Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	0.052Ω
Rated Power Dissipation:	54W
Qg Gate Charge:	94nC
Gate-Source Voltage-Max [Vgss]:	20V
Drain Current:	20A
Turn-on Delay Time:	8.2ns
Turn-off Delay Time:	44ns
Rise Time:	39ns
Fall Time:	33ns
Operating Temp Range:	-55°C to +175°C
Gate Source Threshold:	4V
Technology:	Advanced Process Technology
Height - Max:	9.8mm
Length:	10.63mm
Input Capacitance:	1400pF
Package Style:	TO-220-3 (TO-220AB)

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Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolations is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

Features

Advanced Process Technology
Isolated Package
High Voltage Isolation – 2.5KVRMS5
Sink to Lead Creepage Dist. – 4. 8mm
Fully Avalanche Rated
Lead-Free