IPT60R022S7XTMA1 in Reel by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IPT60R022S7XTMA1

IPT60R Series 600 V 23 A 390 W 22 mOhm Single N-Channel MOSFET - PG-HSOF-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2408
Product Specification Section
Infineon IPT60R022S7XTMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 22mΩ
Rated Power Dissipation: 390W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 23A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 150ns
Rise Time: 4ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 5639pF
Series: CoolMOS
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$10,740.00
USD
Quantity
Unit Price
2,000+
$5.37