IRFU5305PBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRFU5305PBF

Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-251AA

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2447
Product Specification Section
Infineon IRFU5305PBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 110|W
Qg Gate Charge: 63nC
Package Style:  TO-251 (IPAK)
Mounting Method: Through Hole
Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

Ultra Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRFU5305PBF is a Single P-Channel MOSFET. It comes in a I-PAK package and is shipped in tubes.

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Pricing Section
Global Stock:
1,125
USA:
1,125
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
75
Multiple Of:
75
Total
$21.38
USD
Quantity
Unit Price
75
$0.285
300
$0.28
1,500
$0.27
3,000
$0.265
9,375+
$0.255
Product Variant Information section