
Manufacturer Part #
IRFU5305PBF
Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-251AA
Infineon IRFU5305PBF - Product Specification
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Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
Infineon IRFU5305PBF - Technical Attributes
Fet Type: | P-Ch |
Drain-to-Source Voltage [Vdss]: | 55V |
Drain-Source On Resistance-Max: | 0.065Ω |
Rated Power Dissipation: | 110|W |
Qg Gate Charge: | 63nC |
Package Style: | TO-251 (IPAK) |
Mounting Method: | Through Hole |
Features & Applications
Available Packaging
Package Qty:
75 per Tube
Package Style:
TO-251 (IPAK)
Mounting Method:
Through Hole