IRFP90N20DPBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFP90N20DPBF

Manufacturer Part #

IRFP90N20DPBF

Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2418
Product Specification Section
Infineon IRFP90N20DPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.023Ω
Rated Power Dissipation: 580W
Qg Gate Charge: 270nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 94A
Turn-on Delay Time: 23ns
Turn-off Delay Time: 43ns
Rise Time: 160ns
Fall Time: 79ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 20.7mm
Length: 15.87mm
Input Capacitance: 6040pF
Package Style:  TO-247AC
Mounting Method: Flange Mount
Pricing Section
Global Stock:
2,802
USA:
2,802
On Order:Order inventroy details
17,600
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
25
Multiple Of:
25
Total
$59.00
USD
Quantity
Unit Price
25
$2.36
100
$2.33
250
$2.30
625
$2.27
1,000+
$2.24
Product Variant Information section