IRFB4310PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFB4310PBF

Manufacturer Part #

IRFB4310PBF

Single N-Channel 100 V 7 mOhm 250 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
Infineon IRFB4310PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 7mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 250nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 130A
Turn-on Delay Time: 26ns
Turn-off Delay Time: 68ns
Rise Time: 110ns
Fall Time: 78ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 7670pF
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:Order inventroy details
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$55.00
USD
Quantity
Unit Price
50
$1.10
200
$1.09
750
$1.07
2,500+
$1.05
Product Variant Information section