IRLZ34NPBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRLZ34NPBF

Manufacturer Part #

IRLZ34NPBF

Single N-Channel 55 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRLZ34NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.06Ω
Rated Power Dissipation: 68W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 30A
Turn-on Delay Time: 8.9ns
Turn-off Delay Time: 21ns
Rise Time: 100ns
Fall Time: 29ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2V
Technology: Advanced Process Technology
Height - Max: 8.77mm
Length: 10.54mm
Input Capacitance: 880pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$760.00
USD
Quantity
Unit Price
1
$0.41
100
$0.395
300
$0.39
1,250
$0.38
4,000+
$0.36
Product Variant Information section