IXFT80N65X2HV in Tube by Littelfuse – IXYS | Mosfets | Future Electronics
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Manufacturer Part #

IXFT80N65X2HV

IXFT80N65X2HV Series 650 V 80 A N-Channel Power Mosfet - TO-268HV

ECAD Model:
Mfr. Name: Littelfuse – IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Littelfuse – IXYS IXFT80N65X2HV - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 38mΩ
Rated Power Dissipation: 890W
Qg Gate Charge: 140nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 80A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 70ns
Rise Time: 24ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 8300pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
41 Weeks
Minimum Order:
300
Multiple Of:
30
Total
$3,012.00
USD
Quantity
Unit Price
30
$10.16
60
$10.11
120
$10.06
150
$10.04
450+
$9.94
Product Variant Information section