SIRA80DP-T1-RE3 in Reel by Vishay | Mosfets | Future Electronics
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Manufacturer Part #

SIRA80DP-T1-RE3

Single N-Channel 30 V 0.62 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIRA80DP-T1-RE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.62mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 125nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 82A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 41ns
Rise Time: 23ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 9530pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
6000
Multiple Of:
3000
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Total
$4,440.00
USD
Quantity
Unit Price
3,000+
$0.74
Product Variant Information section