IRF2807PBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF2807PBF

Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Infineon IRF2807PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 13mΩ
Rated Power Dissipation: 230|W
Qg Gate Charge: 160nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

The IRF2807PBF is a Single N-Channel MOSFET. It comes in a TO-220AB package and is shipped in tubes.

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Pricing Section
Global Stock:
250
USA:
250
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$31.75
USD
Quantity
Unit Price
50
$0.635
200
$0.62
750
$0.605
2,000
$0.59
5,000+
$0.57
Product Variant Information section