TIP120G in Tube by onsemi | Bipolar (BJT) Transistors | Future Electronics
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Manufacturer Part #

TIP120G

TIP Series 60 V 5 A NPN Medium Power Darlington Silicon Transistor - TO-220AB

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2503
Product Specification Section
onsemi TIP120G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Darlington
CE Voltage-Max: 60V
Collector Current Max: 5A
Power Dissipation-Tot: 2W
DC Current Gain-Min: 1000
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices.

Features:

  • High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage @ 100 mA
    • VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
    • VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
    • VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
  • Low Collector-Emitter Saturation Voltage
    • VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc
    • = 4.0 Vdc (Max) @ IC= 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available
Read More...
Pricing Section
Global Stock:
2,536
USA:
2,536
2,950
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.27
USD
Quantity
Unit Price
1
$0.27
125
$0.265
300
$0.26
1,250
$0.25
3,000+
$0.24
Product Variant Information section