IRFIZ44NPBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRFIZ44NPBF

Single N-Channel 55 V 0.024 Ohm 65 nC HEXFET® Power Mosfet - TO-220-3FP

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
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Product Specification Section
Infineon IRFIZ44NPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 65nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 31A
Turn-on Delay Time: 7.3ns
Turn-off Delay Time: 47ns
Rise Time: 69ns
Fall Time: 60ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 1300pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolations is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

Features

Advanced Process Technology
Isolated Package
High Voltage Isolation – 2.5KVRMS5
Sink to Lead Creepage Dist. – 4. 8mm
Fully Avalanche Rated
Lead-Free

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Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,160.00
USD
Quantity
Unit Price
50
$0.625
200
$0.605
750
$0.59
2,000
$0.58
5,000+
$0.56
Product Variant Information section