IRFP4110PBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRFP4110PBF

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2305
Product Specification Section
Infineon IRFP4110PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 370W
Qg Gate Charge: 210nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 78ns
Rise Time: 67ns
Fall Time: 88ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 20.7mm
Length: 15.87mm
Input Capacitance: 9620pF
Package Style:  TO-247AC
Mounting Method: Flange Mount
Pricing Section
Global Stock:
15
USA:
15
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
15
Multiple Of:
25
Total
$20.85
USD
Quantity
Unit Price
25
$1.39
100
$1.37
375
$1.35
750
$1.33
1,875+
$1.31
Product Variant Information section