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Manufacturer Part #
IRF5210PBF
Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | 2352 | ||||||||||
Infineon IRF5210PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information:Subject Change of the wafer production location from Infineon Technologies Temecula, USA and EPISIL Technologies Inc., Taiwan to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason :The wafer production of the affected products will be transferred to Infineon Technologies Kulim, according to global Infineon production strategy.
Detailed change information:Subject Phase out of Kyocera KEG300 mold compound for several assembly locations and change of lead finish from tin dip to electroplating at Tijuana, Mexico for dedicated TO220-3 & TO247-3 products.Reason:To ensure continuity of mold compound supply due to Kyocera KEG300 end of life and to further ensure our product performance with lead-free electroplating finish
Part Status:
Infineon IRF5210PBF - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 0.06Ω |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 180nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 40A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 79ns |
| Rise Time: | 86ns |
| Fall Time: | 81ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Input Capacitance: | 2700pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Features & Applications
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole