STP18NM60ND in Tube by STMicroelectronics | Mosfets | Future Electronics
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Manufacturer Part #

STP18NM60ND

N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1341
Product Specification Section
STMicroelectronics STP18NM60ND - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.29Ω
Rated Power Dissipation: 130W
Qg Gate Charge: 34nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 13A
Turn-on Delay Time: 55ns
Turn-off Delay Time: 13ns
Rise Time: 15.5ns
Fall Time: 18ns
Gate Source Threshold: 4V
Input Capacitance: 1030pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
200
USA:
200
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
200
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$800.00
USD
Quantity
Unit Price
1,000+
$4.00
Product Variant Information section