IRF8010PBF in Tube by Infineon | Mosfets | Future Electronics
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Manufacturer Part #

IRF8010PBF

Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2439
Product Specification Section
Infineon IRF8010PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 15mΩ
Rated Power Dissipation: 260|W
Qg Gate Charge: 81nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
5,600
USA:
5,600
60,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
50
Multiple Of:
1000
Total
$36.75
USD
Quantity
Unit Price
50
$0.735
2,000
$0.725
3,000
$0.72
4,000
$0.715
5,000+
$0.70
Product Variant Information section