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Infineon 2ED314xMC12L EiceDRIVER™ Gate Driver IC

Geared for MOSFETs, IGBTs, SiC MOSFETs and GaN HEMTs

The Infineon EiceDRIVER™ 2ED314xMC12L is a family of dual-channel isolated gate driver ICs, designed to drive Si MOSFETs, IGBTs and SiC MOSFETs. All products are available in a 14-pin DSO package with 8 mm input-to-output creepage and provide reinforced isolation. All variants offer dead-time control (DTC) functionality and independent channel operation. This allows the operation as dual-channel low-side driver, dual-channel high-side driver or half-bridge gate driver with a configurable dead-time.

EiceDRIVER™ gate drivers by Infineon provide a wide range of typical output current options, from 0.1 A to 18 A. Robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection, make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™.

Features

  • For use with 600 V / 650 V / 1200 V / 1700 V / 2300 V IGBTs, Si and SiC MOSFETs
  • Up to 6.5 A typical peak output current
  • 35 V absolute maximum output supply voltage
  • Active shutdown and short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • Galvanically isolated coreless transformer gate driver with 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance

Benefits

  • Well suited for fast-switching applications with 39 ns propagation delay with 5 ns channel-to-channel delay mismatch (skew) and high common-mode transient immunity CMTI > 200 kV/μs
  • Safety certification - UL 1577 (File 311313), reinforced insulation according to IEC 60747-17 (planned)

 

Applications

  • EV charging
  • Energy storage and UPS systems
  • Solar inverters
  • Server and telecom switched mode power supplies (SMPS)
  • AC and brushless DC motor drives

 

Typical Application

 

 

 

Infineon — 2ED314xMC12L EiceDRIVER™ Gate Driver IC