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Manufacturer Part #

NXH011T120M3F2PTHG

4 N-Channel 1200 V 91 A 272 W 16 mOhm Silicon Carbide MOSFET Module - PIM-29

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2349
Product Specification Section
onsemi NXH011T120M3F2PTHG - Technical Attributes
Attributes Table
Type: Power Module
Technology: SiC (Silicon Carbide) Schottky
Gate-Source Voltage-Max [Vgss]: 1200V
Drain Current: 91A
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
20
Germany (Online Only):
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
20
Multiple Of:
20
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,134.00
USD
Quantity
Unit Price
20
$56.70
40
$56.29
60
$56.05
80+
$55.75
Product Variant Information section