Manufacturer Part #
BSM600D12P4G103
2 N-Channel 1200 V 567 A 1.78 kW Half Bridge Chassis Mount SiC Power Module
Product Specification Section
ROHM BSM600D12P4G103 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
ROHM BSM600D12P4G103 - Technical Attributes
Attributes Table
Technology: | SiCFET (Silicon Carbide) |
Gate-Source Voltage-Max [Vgss]: | 21V |
Isolation Voltage-RMS: | 2500V |
Drain-to-Source Voltage [Vdss]: | 1200V |
Drain Current: | 567A |
Configuration: | Half Bridge |
Operating Temp Range: | -40°C to +150°C |
Package Style: | Module |
Mounting Method: | Chassis Mount |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
30 Weeks
Quantity
Web Price
4+
$904.22
Product Variant Information section
Available Packaging
Package Qty:
4 per Box
Package Style:
Module
Mounting Method:
Chassis Mount