text.skipToContent text.skipToNavigation

Manufacturer Part #

SISS5112DN-T1-GE3

TrenchFET Series 100 V 11 A 14.9 mOhm Single N-Channel MOSFET - PowerPAK 1212-8S

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SISS5112DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 14.9mΩ
Rated Power Dissipation: 3.7W
Qg Gate Charge: 16nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 9ns
Turn-off Delay Time: 11ns
Rise Time: 4ns
Fall Time: 4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 790pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$2,850.00
USD
Quantity
Unit Price
3,000
$0.49
6,000+
$0.475
Product Variant Information section