Manufacturer Part #
SISS5110DN-T1-GE3
TrenchFET Series 100 V 13.4 A 12.6 mOhm N-Channel MOSFET - PowerPAK 1212-8S
Product Specification Section
Vishay SISS5110DN-T1-GE3 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Vishay SISS5110DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: | Active |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 8.9mΩ |
Rated Power Dissipation: | 4.8W |
Qg Gate Charge: | 20nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 13.4A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 13ns |
Rise Time: | 5ns |
Fall Time: | 5ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Input Capacitance: | 920pF |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
27 Weeks
Quantity
Unit Price
3,000
$0.52
6,000+
$0.51
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount