text.skipToContent text.skipToNavigation

Manufacturer Part #

PSMN102-200Y,115

PSMN102 Series 200 V 21.5A N-Ch. TrenchMOS SiliconMAX Standard Level FET - LFPAK

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2416
Product Specification Section
Nexperia PSMN102-200Y,115 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 102mΩ
Rated Power Dissipation: 113W
Qg Gate Charge: 30.7nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 21.5A
Turn-on Delay Time: 14.2ns
Turn-off Delay Time: 33ns
Rise Time: 29.5ns
Fall Time: 28ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: TrenchMOS
Input Capacitance: 1568pF
Package Style:  SOT-669
Mounting Method: Surface Mount
Pricing Section
Global Stock:
1,500
USA:
1,500
7,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
1500
Multiple Of:
1500
Total
$705.00
USD
Quantity
Unit Price
1,500
$0.47
3,000
$0.46
6,000
$0.455
7,500+
$0.45
Product Variant Information section