Manufacturer Part #
PSMN102-200Y,115
PSMN102 Series 200 V 21.5A N-Ch. TrenchMOS SiliconMAX Standard Level FET - LFPAK
Product Specification Section
Nexperia PSMN102-200Y,115 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia PSMN102-200Y,115 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 200V |
Drain-Source On Resistance-Max: | 102mΩ |
Rated Power Dissipation: | 113W |
Qg Gate Charge: | 30.7nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 21.5A |
Turn-on Delay Time: | 14.2ns |
Turn-off Delay Time: | 33ns |
Rise Time: | 29.5ns |
Fall Time: | 28ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | TrenchMOS |
Input Capacitance: | 1568pF |
Package Style: | SOT-669 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
1,500
USA:
1,500
Factory Lead Time:
10 Weeks
Quantity
Unit Price
1,500
$0.47
3,000
$0.46
6,000
$0.455
7,500+
$0.45
Product Variant Information section
Available Packaging
Package Qty:
1500 per Reel
Package Style:
SOT-669
Mounting Method:
Surface Mount