Manufacturer Part #
MRF101BN
MRF Series 100W CW 1.8-250 MHz 50V Wideband RF Power LDMOS Transistor - TO-220-3
Product Specification Section
NXP MRF101BN - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
NXP MRF101BN - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 133V |
Rated Power Dissipation: | 182W |
Gate-Source Voltage-Max [Vgss]: | 10V |
Operating Temp Range: | -40°C to +175°C |
Gate Source Threshold: | 2.2V |
Input Capacitance: | 149pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
50
$14.26
100
$14.18
150
$14.13
200
$14.10
250+
$14.00
Product Variant Information section
Available Packaging
Package Qty:
50 per Bulk
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole