Manufacturer Part #
IGLD60R070D1AUMA1
IGLD60R070D1: 600 V 15A CoolGaN™ Enhancement-Mode Power Transistor - PG-LSON-8-1
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Package Style:PG-LSON-8-1 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1849 | ||||||||||
Infineon IGLD60R070D1AUMA1 - Product Specification
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Change Description:Change of wafer production location from Panasonic to Infineon Technologies Austria AG, Villach, Austria coupled with final test location change from Infineon Technologies Batam P.T., Batam, Indonesia to Infineon Technologies (Malaysia) Sdn. Bhd., Melaka, Malaysia for CoolGaN� products.Reason:End of life notification from PANASONIC for Gallium Nitride bare die supply to Infineon (PD_157_21).Introduction of Infineon�s In-house Gallium Nitride technology as well as correction of life time weakness in soft switching for 400V & 600V CoolGaN� products (Errata sheet: 10230A ).Consolidation of Infineon CoolGaN� products test locations.
UPDATE With this Infineon Technologies AG Errata we would like to inform you about the followingLife time weakness in soft switching for CoolGaN� products (400-600V) Update: solution to reported risk of lifetime reductionDetailed Change Information:Subject: Solution to previously reported risk of lifetime reduction of CoolGaN� products when operating in soft switching conditionsReason: (1) To inform customer about possible product lifetime reduction when operating in soft switching conditions(2) To inform customers on implementation of corresponding corrective measures, enabling reliable operation also in soft switchingDescription:Issue- Operation in soft switching may cause a lifetime reduction and in worst case lead to applications failing in the field- Soft switching transitions (as occurring e.g. in resonant topologies such as LLC and similar topologies) are not recommended with listed affected products.- Hard switching transitions (as occurring e.g. in topologies such as CCM PFC) are not affected.- Applications shall be evaluated for soft switching transients; if such transitions are present productive ramp with above listed affected products shall be avoidedImpact of Change:- Use listed replacement products in soft switching modes.- In case of planned ramp with one of the affected products please contact your Infineon sales office for further clarification.- Change design and feasibility activities towards replacement products as soon as possible.Implementation Date: 2021-05-05Status (04/21)- Root cause is understood and corresponding corrective measures are implemented in all listed replacement products.- Introduction of replacement products via change notification and discontinuation of listed affected product OPN�s
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Infineon IGLD60R070D1AUMA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 114W |
| Qg Gate Charge: | 5.8nC |
| Gate-Source Voltage-Max [Vgss]: | 10V |
| Drain Current: | 15A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 15ns |
| Rise Time: | 9ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.9V |
| Technology: | GaN |
| Input Capacitance: | 380pF |
| Package Style: | PG-LSON-8-1 |
| Mounting Method: | Surface Mount |
Features & Applications
Infineon Technologies has extended its CoolGaN™ series of ultra-high efficiency Gallium Nitride (GaN) power transistors with the introduction of two new devices
APPLICATIONS
• Low-power switch-mode power supplies
• Telecoms rectifiers
• Servers
• Adapters and chargers
• Wireless charging
• Hi-fi and audio equipment
FEATURES
• Thermally-efficient surface-mount packages
• Low capacitance
• High quality and reliability
• Devices can be paralleled
Available Packaging
Package Qty:
3000 per
Package Style:
PG-LSON-8-1
Mounting Method:
Surface Mount